MMZ25332Bt1 1 rf device data freescale semiconductor, inc. heterojunction bipolar transistor technology (ingap hbt) high efficiency/linearity amplifier the MMZ25332B is a 2--stage, high linearity ingap hbt broadband amplifier designed for femtocell, picocell, wlan (802.11g/n), w--cdma, td--scdma and lte wireless broadband applications. i t provides exceptional linearity for lte and w--cdma air interfaces with an acpr of --50 dbc at an output power of up to 22 dbm, covering frequencies from 1800?2800 mhz. it operates from a supply voltage of 3 to 5 volts. the amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount qfn 3 3 package. the device offers state--of--the--art reliability, ruggedness, temperature st ability and esd performance. ? typical performance: v cc1 =v cc2 =v bias =5volts,i cq = 400 ma frequency p out (dbm) g ps (db) acpr (dbc) pae (%) test signal 2140 mhz 22 27.0 --50.0 7.0 w--cdma 2620 mhz 21 26.0 --50.0 5.0 lte 20 mhz features ? frequency: 1800--2800 mhz ? p1db: 33 dbm @ 2500 mhz ? power gain: 26.5 db @ 2500 mhz ? oip3: 48 dbm @ 2500 mhz ? evm < 3% @ 26.5 dbm p out , wimax (802.16e) ? active bias control (adjustable externally) ? single 3 to 5 volt supply ? single--ended power detector ? cost--effective qfn surface mount package ? in tape and reel. t1 suffix = 1,000 units per 12 mm, 7 inch reel. table 1. typical cw performance (1) characteristic symbol 1800 mhz 2500 mhz 2800 mhz unit small--signal gain (s21) g p 27.6 26.5 25.0 db input return loss (s11) irl -- 2 6 -- 1 7 -- 1 6 db output return loss (s22) orl -- 9 -- 1 7 -- 1 6 db power output @ 1db compression p1db 32 33 32 dbm 1. v cc1 =v cc2 =v bias =5vdc,t a =25 c, 50 ohm system, cw application circuit table 2. maximum ratings rating symbol value unit supply voltage v cc 6 v supply current i cc 1200 ma rf input power p in 30 dbm storage temperature range t stg --65 to +150 c junction temperature (2) t j 150 c 2. for reliable operation, the j unction temperature should not exceed 150 c. table 3. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature 92 c, v cc1 =v cc2 =v bias =5vdc r jc 16 c/w 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. freescale semiconductor technical data document number: MMZ25332B rev. 0, 5/2012 1800--2800 mhz, 26.5 db 33 dbm ingap hbt MMZ25332Bt1 qfn 3 3 plastic ? freescale semiconductor, inc., 2012. all rights reserved.
2 rf device data freescale semiconductor, inc. MMZ25332Bt1 table 4. electrical characteristics (v cc1 =v cc2 =v bias = 5 vdc, 2500 mhz, t a =25 c, 50 ohm system, in freescale cw application circuit) characteristic symbol min typ max unit small--signal gain (s21) g p 25 26.5 ? db input return loss (s11) irl ? -- 1 7 ? db output return loss (s22) orl ? -- 1 7 ? db power output @ 1db compression p1db ? 33 ? dbm third order output intercept point, two--tone cw oip3 ? 48 ? dbm noise figure nf ? 5.8 ? db supply current (1) i cq 356 390 412 ma supply voltage (1) v cc ? 5 ? v table 5. esd protection characteristics test methodology class human body model (per jesd22--a114) 3a machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 6. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 1 260 c 1. for reliable operation, the juncti on temperature should not exceed 150 c. figure 1. functional block diagram figure 2. pin connections v cc1 v cc2 /rf out rf in 19 28 37 12 11 10 456 v cc2 /rf out v cc1 p det n.c. rf in v cc2 /rf out v ba1 v ba2 v bias v cc1 v cc2 /rf out rf in v cc2 /rf out v cc1 p det rf in v cc2 /rf out v ba1 v bias v ba2 bias circuit
MMZ25332Bt1 3 rf device data freescale semiconductor, inc. figure 3. MMZ25332Bt1 test circuit schematic ? 2500 mhz, 5 volt operation r1 l1 c12 3 1 c4 bias circuit v cc1 z1 l2 v bias c1 2 r2 p det c3 c9 c7 v cc2 c13 c15 c14 c6 z1 0.155 0.030 microstrip rf input rf output 456 7 8 9 12 11 10 table 7. MMZ25332Bt1 test circuit component desi gnations and values ? 2500 mhz, 5 volt operation part description part number manufacturer c1, c12 1 f chip capacitors grm155r61a105ke15 murata c2, c5, c8, c10, c11 components not placed c3 470 pf chip capacitor grm1555c1h471ja01d murata c4 7.5 pf chip capacitor 04023j7r5bbs avx c6 4.7 f chip capacitor grm188r60j475ke19d murata c7 120 pf chip capacitor grm1555c1h121ja01d murata c9, c14 22 pf chip capacitor 04023j22r0bbs avx c13 2.4 pf chip capacitor 04023j2r4bbs avx c15 1.8 pf chip capacitor 04023j1r8bbs avx l1 24 nh chip inductor 0603hc--24nxjlw coilcraft l2 22 nh chip inductor 0603hc--22nxjlw coilcraft r1 1.2 k ? , 1/16 w chip resistor rc0402jr--071k20l yageo r2 330 ? , 1/16 w chip resistor rc0402jr--07330rl yageo pcb 0.014 , r =3.7 fr408 isola note: component numbers c2, c5, c8, c10 and c11 are labeled on board but not placed.
4 rf device data freescale semiconductor, inc. MMZ25332Bt1 figure 4. MMZ25332B t1 test circuit component lay out ? 2500 mhz, 5 volt operation (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c2*, c5*, c8*, c10* and c11* are labeled on board but not placed. c9 c7 r1 c12 r2 c13 c15 c14 c6 c1 l1 c4 l2 c3 qfn 3 3--12h rev. 1 rf out rf in c2* c5* c10* c8* c11* v cc1 v dect v cc2 v bias (1) table 7. MMZ25332Bt1 test circuit component desi gnations and values ? 2500 mhz, 5 volt operation part description part number manufacturer c1, c12 1 f chip capacitors grm155r61a105ke15 murata c2, c5, c8, c10, c11 components not placed c3 470 pf chip capacitor grm1555c1h471ja01d murata c4 7.5 pf chip capacitor 04023j7r5bbs avx c6 4.7 f chip capacitor grm188r60j475ke19d murata c7 120 pf chip capacitor grm1555c1h121ja01d murata c9, c14 22 pf chip capacitor 04023j22r0bbs avx c13 2.4 pf chip capacitor 04023j2r4bbs avx c15 1.8 pf chip capacitor 04023j1r8bbs avx l1 24 nh chip inductor 0603hc--24nxjlw coilcraft l2 22 nh chip inductor 0603hc--22nxjlw coilcraft r1 1.2 k ? , 1/16 w chip resistor rc0402jr--071k20l yageo r2 330 ? , 1/16 w chip resistor rc0402jr--07330rl yageo pcb 0.014 , r =3.7 fr408 isola (test circuit component designations and values table repeated for reference.)
MMZ25332Bt1 5 rf device data freescale semiconductor, inc. figure 5. pcb pad layout for qfn 3x3 3.00 3.40 2.00 0.50 0.30 1.6 x 1.6 solder pad with thermal via structure 0.70 figure 6. product marking ma05 ywz
6 rf device data freescale semiconductor, inc. MMZ25332Bt1 package dimensions
MMZ25332Bt1 7 rf device data freescale semiconductor, inc.
8 rf device data freescale semiconductor, inc. MMZ25332Bt1
MMZ25332Bt1 9 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers software ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 may 2012 ? initial release of data sheet
10 rf device data freescale semiconductor, inc. MMZ25332Bt1 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/freescale/docs/termsandconditions.htm. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: MMZ25332B rev. 0, 5/2012
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